Abstract: Photodetectors that enable weak light detection can be found in numerous applications including biomedical imaging, chemiluminescence detection and scientific spectroscopy. Photomultiplier Tubes (PMTs), Avalanche Photodiodes (APDs), and Silicon Photomultipliers (SiPMs) or Single Photon Avalanche Photodiodes (SPADs) have been widely used. However, bulky and power-hungry PMTs have suffered from severe temperature drift and hence, are very sensitive to ambient environment. APDs and SiPMs are compact but they have high shot noise and strong temperature dependence of output. Recently, 3-D photodetectors based on non-crystalline silicon thin-film transistors were investigated and deployed for digital mammography, nevertheless, their narrow dynamic range cannot meet the requirements for many applications. Since 2019, we have developed a new type of solid state photodetector, so-called photodiode-body-biased MOSFET (PD-MOS) that enjoys both high gain and wide dynamic range. Different from APDs and PMTs using either avalanche or photomultiplication to achieve high gain, the high-gain mechanism in the PD-MOS lies in the photo-modulated body bias effect. However, noise and dark current are still kept high. Here, our approach to high SNR is improving the gain while reducing the noise by a photoelectric integrated device (PID) based on dual PD-MOSs with one dark-PD-MOS and the other light-PD-MOS. Furthermore, by tuning the gate bias of the light-PD-MOS, an adjustable gain of unity to 107 is attained together with a wide dynamic range over 160dB and a broad spectrum response from 254nm to 1300nm. Such performance characteristics have made it a great promise for many emerging applications, requiring low-level detection and imaging. Speaker(s): Kai, Room: ASB 10704, Bldg: Applied Science Building, 8888 University Dr., Burnaby, British Columbia, Canada, V5A 1S6, Virtual: https://events.vtools.ieee.org/m/363742